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| SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ISSUE 1 - JULY 1999 ZDT795A C1 C1 C2 C2 PARTMARKING DETAIL - T795A B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC T j :T stg VALUE -140 -140 -5 -1 -0.5 -55 to +150 UNIT V V V A A C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at T amb = 25C* Any single die "on" Both die "on" equally Derate above 25C* Any single die "on" Both die "on" equally Thermal Resistance - Junction to Ambient* Any single die "on" Both die "on" equally SYMBOL P tot 2.25 2.75 18 22 55.6 45.5 W W mW/ C mW/ C C/ W C/ W VALUE UNIT * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. ZDT795A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage SYMBOL MIN. V (BR)CBO -140 TYP. MAX. UNIT V CONDITIONS. I C=-100A, I E=0 V (BR)CEO -140 V I C=-10mA, I B=0* V (BR)EBO -5 V A A V V V V I E=-100A, I C=0 V CB=-100V I CBO -0.1 I EBO V CE(sat) -0.1 -0.3 -0.3 -0.25 -0.95 V EB=-4V, I E=0 I C=-100mA, I B=-1mA* I C=-200mA, I B=-5mA* I C=-500mA, I B=-50mA* I C=-500mA, I B=-50mA* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage V BE(sat) V BE(on) -0.75 V I C =-500mA, V CE=-2V* Static Forward Current h FE Transfer Ratio 300 250 100 100 800 I C=-10mA, V CE=-2V* I C=-200mA, V CE=-2V* I C=-300mA, V CE=-2V* MHz I C=-50mA, V CE=-5V f=50MHz V CB=-10V f=1MHz I C=-100mA, V CC=-50V I B1=I B2=-10mA Transition Frequency fT Output Capacitance Switching Times C obo t on t off 15 100 1900 pF ns ns *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ZDT795A TYPICAL CHARACTERISTICS 1.8 1.6 1.4 IC/IB=40 IC/IB=20 IC/IB=10 1.8 Tamb=25C 1.6 1.4 -55C +25C +100C +175C IC/IB=40 VCE(sat) - (Volts) VCE(sat) - (Volts) 0.01 0.1 1 10 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 +100C +25C -55C VCE=2V 1.6 750 hFE - Normalised Gain hFE - Typical Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 1.4 -55C +25C +100C +175C IC/IB=10 VBE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 500 250 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.6 1.4 -55C +25C +100C VCE=2V VBE - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 IC - Collector Current (Amps) VBE(on) v IC |
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